MOBILITY BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

The electric field dependence of electron and hole mobility was invest igated in n-channel and p-channel metaloxide-semiconductor field-effec t transistors with oxynitride gate dielectrics formed using low-pressu re rapid thermal chemical vapor deposition with SiH4, N2O and NH3 as t he reactive gases, The peak electron mobility was observed to decrease with increasing nitrogen and hydrogen concentration whereas the high- field mobility degradation was improved, The hole mobility was observe d to decrease for all electric fields. A self-consistent physical expl anation for the observed electron and hole mobility behavior is sugges ted based on the electrical results, We attribute the observed mobilit y characteristics mainly to the trapping behavior of these films.