GALLIUM ANTIMONIDE DEVICE RELATED PROPERTIES

Authors
MILNES AG POLYAKOV AY
Citation
Ag. Milnes et Ay. Polyakov, GALLIUM ANTIMONIDE DEVICE RELATED PROPERTIES, Solid-state electronics, 36(6), 1993, pp. 803-818
Citations number
137
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
6
Year of publication
1993
Pages
803 - 818
Database
ISI
SICI code
0038-1101(1993)36:6<803:GADRP>2.0.ZU;2-K
Abstract
The physical properties of GaSb are briefly presented and the device i mplications reviewed. GaSb is a direct gap semiconductor (0.72 eV) cap able of being doped either p or n type with good mobilities and it has significant electro-optical potential in the near IR range. As a subs trate, or active layer, GaSb can be employed in conjunction with many semiconductors such as (AlGa)Sb or In(AsSb) and has interesting hetero junction potential for detectors and lasers and quantum well structure s.