REAL-TIME INVESTIGATION OF NUCLEATION AND GROWTH OF SILICON ON SILICON DIOXIDE USING SILANE AND DISILANE IN A RAPID THERMAL-PROCESSING SYSTEM

The kinetics of the nucleation and growth of Si films on amorphous SiO 2-covered Si using rapid thermal chemical vapor deposition from SiH4 a nd Si2H6 (5% in He) were compared at temperatures between 600 and 800 degrees C and reactant gas pressures between 1 and 35 mTOrr. Quantitat ive assessment of the nucleation parameters and the structures of the deposited Si films have been determined using in situ real time single wavelength and spectroscopic ellipsometry. Tn addition to ellipsometr y, atomic force microscopy. scanning electron microscopy, and cross-se ctional transmission electron microscopy were: used ex situ to observe the nucleation stage and the microstructures of the films. This study compares the initial growth parameters for SiH4: nuclei density (6 x 10(8) cm(-2)), nuclei size (94 nm), incubation time (4.2 min), and deg ree of selectivity (42 nm) with those for Si2H6: 1.3 x 10(10) cm(-2), 31 nm, 0.4 min, and 10 nm, respectively, The incubation times for SiH4 and Si2H6 are different, as is the degree of selectivity, but they sh ow similar activation energies of about 1 eV in the 600-800 degrees C range. The Si film quality in terms of surface roughness and grain str ucture was better for the Si film derived from Si2H6 than from SiH4. ( C) 1995 American Vacuum Society.