NEW OPTOELECTRONIC TIP DESIGN FOR ULTRAFAST SCANNING-TUNNELING-MICROSCOPY

Citation
Rhm. Groeneveld et al., NEW OPTOELECTRONIC TIP DESIGN FOR ULTRAFAST SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 861-863
Citations number
8
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
2
Year of publication
1996
Pages
861 - 863
Database
ISI
SICI code
1071-1023(1996)14:2<861:NOTDFU>2.0.ZU;2-G
Abstract
We have developed a scanning tunneling microscope using an optoelectro nic switch that gates the tunneling tip current, The switch is fabrica ted within 30 mu m from the tip by photolithography and an accurate cl eavage method. We demonstrate this approach by detecting picosecond el ectrical transients on a coplanar stripline. We have investigated the signal dependence on contact resistance and found significant differen ces when the tip is brought from low-ohmic contact into the tunneling regime. In this regime, the THz signal amplitude was found to depend l inearly on the tunnel conductance, and disappeared when the tip was re tracted. (C) 1996 American Vacuum Society.