B. Rottger et al., LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY ON VICINAL GE(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 925-928
Using variable temperature scanning tunneling microscopy vicinal surfa
ces of Ge(100) have been studied in a temperature range between 80 and
300 K (room temperature). Annealing the sample gives rise to a nonuni
form terrace and step distribution. Terraces with dimer rows perpendic
ular to the step edges cover approximately 3/4 of the entire surface.
At room temperature about, of the surface is covered by buckled dimers
. Dimers of straight SA steps are always pinned, i.e., they appear in
their buckled form. On top of terraces buckling is also found, associa
ted either with kinks in the step edges or in the formation of a singl
e antisite dimer. At 80 K all dimers appear asymmetric in c(2x4) or p(
2x2) geometry. A transition between both structures may occur due to s
ample-tip interaction which indicates that the energies of both recons
tructions are rather similar. (C) 1996 American Vacuum Society.