LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY ON VICINAL GE(100)

Citation
B. Rottger et al., LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY ON VICINAL GE(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 925-928
Citations number
13
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
2
Year of publication
1996
Pages
925 - 928
Database
ISI
SICI code
1071-1023(1996)14:2<925:LSOVG>2.0.ZU;2-7
Abstract
Using variable temperature scanning tunneling microscopy vicinal surfa ces of Ge(100) have been studied in a temperature range between 80 and 300 K (room temperature). Annealing the sample gives rise to a nonuni form terrace and step distribution. Terraces with dimer rows perpendic ular to the step edges cover approximately 3/4 of the entire surface. At room temperature about, of the surface is covered by buckled dimers . Dimers of straight SA steps are always pinned, i.e., they appear in their buckled form. On top of terraces buckling is also found, associa ted either with kinks in the step edges or in the formation of a singl e antisite dimer. At 80 K all dimers appear asymmetric in c(2x4) or p( 2x2) geometry. A transition between both structures may occur due to s ample-tip interaction which indicates that the energies of both recons tructions are rather similar. (C) 1996 American Vacuum Society.