D. Chen et al., ADSORPTION AND DECOMPOSITION OF C-60 MOLECULES ON SI(111) SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 979-981
Adsorption of C-60 molecules on Si(lll)-(7x7) has been studied using s
canning tunneling microscopy under ultrahigh vacuum conditions at a va
riety of temperatures and coverages. At submonolayer coverages, isolat
ed C-60 molecules were found to adsorb preferentially in the areas nea
r the three midadatoms within a half unit cell of (7x7) symmetry. At m
onolayer coverage, the adsorbate-adsorbate interaction changes the mol
ecular bonding sites and causes the local ordering of the C-60 adlayer
. Thermal annealing to temperatures above 800 degrees C causes the dec
omposition of C-60 molecules on the Si surface and the formation of SI
C clusters. (C) 1996 American Vacuum Society.