ADSORPTION AND DECOMPOSITION OF C-60 MOLECULES ON SI(111) SURFACES

Citation
D. Chen et al., ADSORPTION AND DECOMPOSITION OF C-60 MOLECULES ON SI(111) SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 979-981
Citations number
16
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
2
Year of publication
1996
Pages
979 - 981
Database
ISI
SICI code
1071-1023(1996)14:2<979:AADOCM>2.0.ZU;2-W
Abstract
Adsorption of C-60 molecules on Si(lll)-(7x7) has been studied using s canning tunneling microscopy under ultrahigh vacuum conditions at a va riety of temperatures and coverages. At submonolayer coverages, isolat ed C-60 molecules were found to adsorb preferentially in the areas nea r the three midadatoms within a half unit cell of (7x7) symmetry. At m onolayer coverage, the adsorbate-adsorbate interaction changes the mol ecular bonding sites and causes the local ordering of the C-60 adlayer . Thermal annealing to temperatures above 800 degrees C causes the dec omposition of C-60 molecules on the Si surface and the formation of SI C clusters. (C) 1996 American Vacuum Society.