ATOMIC-HYDROGEN-INDUCED AG CLUSTER FORMATION ON SI(111)-ROOT-3X-ROOT-3-AG SURFACE OBSERVED BY SCANNING-TUNNELING-MICROSCOPY

Authors
OURA K OHNISHI H YAMAMOTO Y KATAYAMA I OHBA Y
Citation
K. Oura et al., ATOMIC-HYDROGEN-INDUCED AG CLUSTER FORMATION ON SI(111)-ROOT-3X-ROOT-3-AG SURFACE OBSERVED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 988-991
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
2
Year of publication
1996
Pages
988 - 991
Database
ISI
SICI code
1071-1023(1996)14:2<988:AACFOS>2.0.ZU;2-S
Abstract
The scanning tunneling microscope has been used to study structural tr ansformation of the Si(lll)-root 3x root 3(R30 degrees)-Ag surface cau sed by atomic hydrogen adsorption. Atomically resolved scanning tunnel ing microscope images reveal a structure model for exchange adsorption of hydrogen and silver atoms. It has been shown that the proposed mod el can well explain various experimental results reported so far on th is system. (C) 1996 American Vacuum Society.