SUBMONOLAYER PB DEPOSITION ON SI(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY

Citation
Jy. Veuillen et al., SUBMONOLAYER PB DEPOSITION ON SI(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1010-1014
Citations number
21
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
2
Year of publication
1996
Pages
1010 - 1014
Database
ISI
SICI code
1071-1023(1996)14:2<1010:SPDOSS>2.0.ZU;2-Q
Abstract
Initial stages of Pb deposition on Si(100) 2x1 surfaces have been stud ied by means of scanning tunneling microscopy, Scanning tunneling micr oscopy results show that, at room temperature and loa coverage. long q uasi-one-dimensional Pb chains can be formed on this substrate, These chains, composed of Pb dimers, run in a direction perpendicular to the underlying Si dimer rows, The chain length suggests that Pb diffusion on the Si surface is a relevant effect even at room temperature, Some indications of Pb dimers movements are presented. (C) 1996 American V acuum Society.