T. Uchihashi et al., CORRELATION BETWEEN CONTACT-ELECTRIFIED CHARGE GROUPS ON A THIN SILICON-OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1055-1059
Proximity effects of charge groups deposited by contact electrificatio
n on thin silicon oxide in air were investigated using a modified atom
ic force microscope. For initial separations L of L similar to 3.0 mu
m, oppositely charged groups recede from each other in distance with t
ime after contact electrification. On the other hand, a couple of nega
tive (unipolar) charge groups approach each other with time. These fea
tures are contrary to the expected approach or recession due to the Co
ulomb attractive or repulsive forcer respectively. Furthermore, the cr
itical time t(c) of a stable-unstable phase transition of negative cha
rges becomes shorter or longer due to the proximity effects by the opp
osite or same charge groups, respectively. These proximity effects see
m to be induced by the interplay of the Coulomb force and the surface
charge diffusion. (C) 1996 American Vacuum Society.