CORRELATION BETWEEN CONTACT-ELECTRIFIED CHARGE GROUPS ON A THIN SILICON-OXIDE

Citation
T. Uchihashi et al., CORRELATION BETWEEN CONTACT-ELECTRIFIED CHARGE GROUPS ON A THIN SILICON-OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1055-1059
Citations number
9
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
2
Year of publication
1996
Pages
1055 - 1059
Database
ISI
SICI code
1071-1023(1996)14:2<1055:CBCCGO>2.0.ZU;2-H
Abstract
Proximity effects of charge groups deposited by contact electrificatio n on thin silicon oxide in air were investigated using a modified atom ic force microscope. For initial separations L of L similar to 3.0 mu m, oppositely charged groups recede from each other in distance with t ime after contact electrification. On the other hand, a couple of nega tive (unipolar) charge groups approach each other with time. These fea tures are contrary to the expected approach or recession due to the Co ulomb attractive or repulsive forcer respectively. Furthermore, the cr itical time t(c) of a stable-unstable phase transition of negative cha rges becomes shorter or longer due to the proximity effects by the opp osite or same charge groups, respectively. These proximity effects see m to be induced by the interplay of the Coulomb force and the surface charge diffusion. (C) 1996 American Vacuum Society.