APPLICATION OF SCANNING-TUNNELING-MICROSCOPY NANOFABRICATION PROCESS TO SINGLE-ELECTRON TRANSISTOR

The single electron transistor was fabricated by quite a new fabricati on process using scanning tunneling microscopy, The single electron tr ansistor operates at room temperature showing a clear Coulomb staircas e of 150 mV periods. The tip of the scanning tunneling microscope was used as a cathode, and the surface of the Ti layer was oxidized to for m a narrow oxidized Ti line. Using this oxidized Ti line, the island r egion of the single electron transistor was fabricated. The electrical property of the oxidized Ti line was also examined in detail. (C) 199 6 American Vacuum Society.