MBE GROWTH AND PROPERTIES OF GAN AND ALXGA1-XN ON GAN SIC SUBSTRATES/

The growth of GaN and AlGaN by molecular beam epitaxy (MBE) has been s tudied using GaN/SiC substrates. The GaN/SiC substrates consisted of s imilar to 3 mu m thick GaN buffer layers grown on GH-SiC wafers by met alorganic vapor phase epitaxy (MOVPE) at Cree Research, Inc. The MBE-g rown GaN films exhibit excellent structural and optical properties-com parable to the best GaN grown by MOVPE. AlxGa1-xN films (x similar to 0.06-0.08) and AlxGa1-xN/GaN multi-quantum-well structures which displ ay good optical properties were also grown by MBE on GaN/SiC substrate s.