MAGNETIC-RESONANCE STUDIES OF GAN BASED LIGHT-EMITTING-DIODES

We report the application of electrical detection of magnetic resonanc e (EDMR) and electroluminescence detection of magnetic resonance (ELDM R) to study the recombination processes in InGaN/AlGaN double heterost ructure p-nj unctions. These techniques are especially well suited to the problems of defects in device structures in that they are much mor e sensitive than conventional paramagnetic resonance and are responsiv e to only those defects involved in the electrooptical properties of t he structure. One resonance is observed at g approximate to 2.00 and i s identified as a Zn-related acceptor trap in the InGaN layer. A secon d resonance with g approximate to 1.99 is identified as a deep donor.