STRESS BIREFRINGENCE IN VAPOR-GROWN CDTE AND ITS CORRELATION TO THE GROWTH TECHNIQUES

The measurement of piezobirefringence in CdTe is a useful tool for the detection of long-range and local stress fields. By means of infrared polariscopy, we obtained both the orientation of principal stresses, and the size mapping of their differences. Wall contact of the crystal , self-seeding and formation of facets at the phase boundary are origi ns of highly strained regions. Local stress fields can be assigned to microscopic defects such as dislocations and inclusions. We will contr ibute to the classification of inclusions concerning their size and sh ape versus local stress generation.