STRESS BIREFRINGENCE IN VAPOR-GROWN CDTE AND ITS CORRELATION TO THE GROWTH TECHNIQUES

Citation
M. Laasch et al., STRESS BIREFRINGENCE IN VAPOR-GROWN CDTE AND ITS CORRELATION TO THE GROWTH TECHNIQUES, Journal of crystal growth, 161(1-4), 1996, pp. 34-39
Citations number
19
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
161
Issue
1-4
Year of publication
1996
Pages
34 - 39
Database
ISI
SICI code
0022-0248(1996)161:1-4<34:SBIVCA>2.0.ZU;2-J
Abstract
The measurement of piezobirefringence in CdTe is a useful tool for the detection of long-range and local stress fields. By means of infrared polariscopy, we obtained both the orientation of principal stresses, and the size mapping of their differences. Wall contact of the crystal , self-seeding and formation of facets at the phase boundary are origi ns of highly strained regions. Local stress fields can be assigned to microscopic defects such as dislocations and inclusions. We will contr ibute to the classification of inclusions concerning their size and sh ape versus local stress generation.