M. Laasch et al., STRESS BIREFRINGENCE IN VAPOR-GROWN CDTE AND ITS CORRELATION TO THE GROWTH TECHNIQUES, Journal of crystal growth, 161(1-4), 1996, pp. 34-39
The measurement of piezobirefringence in CdTe is a useful tool for the
detection of long-range and local stress fields. By means of infrared
polariscopy, we obtained both the orientation of principal stresses,
and the size mapping of their differences. Wall contact of the crystal
, self-seeding and formation of facets at the phase boundary are origi
ns of highly strained regions. Local stress fields can be assigned to
microscopic defects such as dislocations and inclusions. We will contr
ibute to the classification of inclusions concerning their size and sh
ape versus local stress generation.