INCORPORATION OF DOPANTS AND NATIVE DEFECTS IN BULK HG1-XCDX TE CRYSTALS AND EPITAXIAL LAYERS

Authors
VYDYANATH HR
Citation
Hr. Vydyanath, INCORPORATION OF DOPANTS AND NATIVE DEFECTS IN BULK HG1-XCDX TE CRYSTALS AND EPITAXIAL LAYERS, Journal of crystal growth, 161(1-4), 1996, pp. 64-72
Citations number
37
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
161
Issue
1-4
Year of publication
1996
Pages
64 - 72
Database
ISI
SICI code
0022-0248(1996)161:1-4<64:IODAND>2.0.ZU;2-T
Abstract
Mechanisms of incorporation of native defects and dopants in bulk and epitaxially grown Hg1-xCdxTe will be reviewed. Origin of the presence of carrier lifetime killing native defect-related deep centers will be examined. Ways of reducing them will be explored.