DEFECT RECOVERY OF ION-IMPLANTED CDTE

The defect recovery of Bridgman and MBE grown CdTe implanted with In a nd Cd ions (E = 60-350 keV) has been studied using the perturbed yy an gular correlation technique (PAC) sensitive to defects present in the immediate neighborhood of the implanted ions and photoluminescence spe ctroscopy (PL). Both the implanted species and the material influence the annealing behavior. Emission channeling experiments with implanted Cd-111m ions show that already after implantation at 295 K the major fraction of implanted ions occupies substitutional lattice sites. The observed differences between Bridgman and MBE grown material indicate that the annealing behavior depends on the purity and crystal quality of the material. PL measurements on In-implanted CdTe show that for th e overall recovery of the implanted layer annealing temperatures up to 800 K are necessary.