POINT-DEFECTS IN TE-RICH CDTE

Measurements of high-temperature electric properties were performed us ing Bridgman grown CdTe single crystals. Fast-diffusing impurities wer e extracted by bathing in CdTe-Te melts. At 700-850 K carrier concentr ation dependence on tellurium vapour pressure was observed. The analys is of the obtained results indicates the participation both of native and foreign point defects in high-temperature defects' equilibrium. Th e results are discussed in suggesting of electrical activity of uncont rolled residual impurity Si.