An investigation of the effects of annealing thin film CdTe/CdS/ITO/gl
ass photovoltaic cells in air after prior exposure to CdCl2 has been m
ade. The influence of this on the efficiency, current transport mechan
ism, grain size and microstructure of the films has been studied. A Cd
Cl2 treatment reduces the,influence of interfacial states on the curre
nt transport mechanism, causes grain growth in the CdS and CdTe and al
so decreases the density of stacking faults and dislocations in the Cd
Te. However, it introduces Cl-rich precipitates into the lattice. Cros
s-section and plan-view TEM evidence is presented and the usefulness o
f moire fringe analysis is highlighted.