CONDUCTIVITY CONVERSION IN CDTE LAYERS

The defect structure and conductivity type in CdTe layers formed with CdCl2, flux are investigated. It is stated that chlorine outdiffusion combined with the slow cooling thermal treatment under tellurium press ure enables one to get high stable p-conductivity in CdTe layers recry stallized with CdCl2. p-type resistivity under 100 Omega . cm and a da rk-to-light resistance ratio under 1.02 have been achieved. It is supp osed that high p-type conductivity is originated from a shallow accept or complex (Te-i(2-)-Cl-Te(+))(-) or/and (V-Cd(2-)-Cl-Te(+))(-). Inter stitial tellurium is proposed as the 1.4 eV photoluminescence band kil ler in CdTe.