LATTICE SITES OF LI IN CDTE

Citation
M. Restle et al., LATTICE SITES OF LI IN CDTE, Journal of crystal growth, 161(1-4), 1996, pp. 168-171
Citations number
13
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
161
Issue
1-4
Year of publication
1996
Pages
168 - 171
Database
ISI
SICI code
0022-0248(1996)161:1-4<168:LSOLIC>2.0.ZU;2-I
Abstract
The lattice site occupation of Li in CdTe at temperatures between 40 a nd 500 K was investigated with the emission channeling method. Radioac tive Li-8 ions were implanted at low doses into CdTe single crystals. Emission channeling patterns of alpha-particles emitted in the nuclear decay of Li-8 (t(1/2) = 838 ms) were measured and compared to calcula ted emission channeling and blocking effects. At temperatures below 13 0 K the Li ions occupy mainly tetrahedral interstitial sites and about 10% substitutional sites. In the temperature range between 130 and 19 0 K, a site change from the tetrahedral interstitial sites to substitu tional sites is observed. Between 190 and 470 K, in addition to the su bstitutional Li, all samples show Li at sites, which are displaced 0.7 (1) Angstrom from the substitutional position, either along the [111] axis or [100] axis. Above 470 K out-diffusion of Li to the surface is observed.