By means of electrical and magnetic investigation of Yb-doped CdTe cry
stals, the following was established: (1) Additional shallow donors an
d paramagnetic centers are not introduced into the doping process; the
hole conductivity of doped crystals is controlled by A-centers; their
ionization energy depends on Yb impurity concentration (C) according
to the law E(A) = (0.15 + 2.4 x 10(-11)C(-1/2)) eV; (2) It is supposed
that Yb impurity deforms the lattice so that the components of the co
mplex A-center move away one from another when the concentration (C) i
ncreases; and E(A) increases accordingly.