NONCONTACT CHARACTERIZATION OF CDTE DOPED WITH V OR TI

Time dependent charge measurements (TDCM) are used for noncontact char acterization of CdTe crystals doped with vanadium or titanium. Several extensions of the basic technique are presented, which allow for the investigation of the thermal activation energy of the charge carriers, the photosensitivity and the surface photovoltage (SPV). Results of n oncontact DLTS measurements show that the formation of defects can cha nge suddenly during the crystal growth process.