Au, Ag, Al and Pd-InP (n type) interfaces were obtained by UHV and air
cleavage. The interfaces were characterized by electrical methods: I-
V, C-V, SCS (Schottky Capacitance Spectroscopy). In spite of great var
iations in the reactivities of the deposited metals and two kinds of i
nterface preparation, the Schottky barrier heights (except air cleaved
Au-InP) are quite similar. The study of interface states by SCS shows
the presence of two characteristic states, regardless of which metal,
localized near E(c)-0.25 eV and E(c)-0.37 eV. The latter may play a s
ignificant role in the Fermi level pinning.