MAJORITY CARRIER MOBILITY IN ULTRA HEAVILY DOPED N-TYPE SI IN THE PRESENCE OF DEFECTS AND DISLOCATIONS

Authors
ZIVANOV MB JEVTIC M
Citation
Mb. Zivanov et M. Jevtic, MAJORITY CARRIER MOBILITY IN ULTRA HEAVILY DOPED N-TYPE SI IN THE PRESENCE OF DEFECTS AND DISLOCATIONS, Solid-state electronics, 36(6), 1993, pp. 891-898
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
6
Year of publication
1993
Pages
891 - 898
Database
ISI
SICI code
0038-1101(1993)36:6<891:MCMIUH>2.0.ZU;2-B
Abstract
The paper describes the numerical analysis of scattering effects in th e presence of defects (to 5 . 10(17) cm-3) and dislocations (to 5 . 10 (11) cm-2) on the relaxation time and mobility of major carriers in ul tra heavily doped n-Si (to 6 . 10(21) cm-3) in the temperature range f rom 250 to 400 K. A detailed physical model was used with self consist ently determined Fermi energy and screening length. The obtained total average relaxation time and mobility agree well with the experimental results.