B. Sogoyou et al., INFLUENCE OF SULFUR CONCENTRATION ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AU GAAS(1-X)SX/MO STRUCTURES/, Solid-state electronics, 36(6), 1993, pp. 927-932
We present the results of a study of current voltage characteristics o
f Au/GaAs(1-x)Sx/Mo test structures. The GaAs(1-x)Sx semiconductor fil
m is deposited by radio frequency sputtering in a mixed (Ar, H2S) gas.
We observe three types of characteristics whose shape can be explaine
d by the grain boundaries and the metal-semiconductor interface states
. For x values exceeding 0.16, the characteristics are of fully rectif
ying type. The increase in sulfur concentration induces a decrease in
grain boundary activity and an improvement of the gold/semiconductor i
nterface.