INFLUENCE OF SULFUR CONCENTRATION ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AU GAAS(1-X)SX/MO STRUCTURES/

Authors
SOGOYOU B LALANDE F CARCHANO H
Citation
B. Sogoyou et al., INFLUENCE OF SULFUR CONCENTRATION ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AU GAAS(1-X)SX/MO STRUCTURES/, Solid-state electronics, 36(6), 1993, pp. 927-932
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
6
Year of publication
1993
Pages
927 - 932
Database
ISI
SICI code
0038-1101(1993)36:6<927:IOSCOT>2.0.ZU;2-C
Abstract
We present the results of a study of current voltage characteristics o f Au/GaAs(1-x)Sx/Mo test structures. The GaAs(1-x)Sx semiconductor fil m is deposited by radio frequency sputtering in a mixed (Ar, H2S) gas. We observe three types of characteristics whose shape can be explaine d by the grain boundaries and the metal-semiconductor interface states . For x values exceeding 0.16, the characteristics are of fully rectif ying type. The increase in sulfur concentration induces a decrease in grain boundary activity and an improvement of the gold/semiconductor i nterface.