LUMINESCENCE OF ZNS-TB3-SM3+ FILMS PREPARED BY DECOMPOSITION OF CHELATE COMPLEXES( AND ZNS)

Photo- and cathodoluminescence of ZnS films prepared by low-temperatur e decomposition of sulfur-containing chelate complexes and doped with Tb and Sm during deposition were investigated as a function of dopant content and annealing temperature. The spectra of the films exhibit na rrow bands of intracenter luminescence due to the radiative transition s D-5(4) --> F-7(j) (j = 3, 4, 5, 6) in Tb3+ and (4)G(5/2) --> H-6(j) (j = 5/2, 7/2, 9/2) in Sm3+, with the strongest bands at 546 (for ZnS: Tb3+ films) and 655 nm (for ZnS:Sm3+ films). The intensity of the intr acenter bands increases monotonically with increasing dopant content u p to 0.2 at. % Tb and 2 at. % Sm. The basic luminescence parameters ca n be optimized by annealing the films under appropriate conditions.