Pure and copper-doped tin dioxide films were prepared by pulsed laser
ablation of metallic targets, followed by oxidation. The optimal depos
ition and oxidation conditions were found. The composition of the meta
llic and oxidized films was determined by Auger electron spectroscopy
and ICP emission spectrometry. Structural characterization;vas perform
ed by x-ray diffraction. Scanning electron microscopy, x-ray diffracti
on, and high-temperature optical microscopy data demonstrate that the
microstructure of the films depends on laser-beam power density as wel
l as on substrate temperature. Most uniform grain-size distributions w
ere obtained at substrate temperatures from 50 to 70 and from 280 to 3
00 degrees C. The copper dopant has no effect on film microstructure.
Long-term oxidizing annealing leads to copper enrichment in the near-s
urface region.