GEOMETRIC AND ELECTRONIC-STRUCTURES OF NAGAAS

Citation
Cl. Bai et al., GEOMETRIC AND ELECTRONIC-STRUCTURES OF NAGAAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(3), 1993, pp. 525-528
Citations number
14
Categorie Soggetti
Physics, Applied
ISSN journal
07342101
Volume
11
Issue
3
Year of publication
1993
Pages
525 - 528
Database
ISI
SICI code
0734-2101(1993)11:3<525:GAEON>2.0.ZU;2-C
Abstract
This article reports structural and electronic properties of sodium ad sorbed on room-temperature GaAs(110) surface as observed with scanning tunneling microscopy in an ultrahigh vacuum. In the low-coverage regi me, Na adatoms reside on the bridge site encompassing one Ga and two A s surface atoms to form linear chains along the [110BAR] direction. Th e Na-Na nearest-neighbor distance in this low-density chain structure is 8 angstrom. When the Na coverage was increased to approximately 0.0 9 ML (1 ML = 2 Na per substrate unit cell), the chains became slightly disordered. Some of them were packed closer to form domains with loca l 2 X 2 structure. None of high-density two-dimensional ordered struct ures or low-density zigzag chains was observed, in contrast to the Cs/ GaAs (110) system. Additional Na adsorption resulted in the formation of three-dimensional disordered clusters. The saturation coverage of N a adsorption on the GaAs (110) surface was determined to be approximat ely 0.1 ML. No evidence of metallic characteristics was found in the I -V curves recorded over the various Na-covered surfaces.