ELECTRON DESORPTION STUDY OF HF ETCHED SI(100)

Authors
CRAIG JH CARISS C CRAIG MJ
Citation
Jh. Craig et al., ELECTRON DESORPTION STUDY OF HF ETCHED SI(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(3), 1993, pp. 554-556
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
11
Issue
3
Year of publication
1993
Pages
554 - 556
Database
ISI
SICI code
0734-2101(1993)11:3<554:EDSOHE>2.0.ZU;2-S
Abstract
The electron stimulated desorption signature of a HF etched Si(100) su rface has been examined in this study. Hydrogen passivation results in strong H+ and H- desorption signals. Both F+ and F- species are elect ronically desorbed, although no fluorine is observed in Auger electron spectroscopy. Low current density argon ion sputtering results in sig nificant changes in the H+ and H- energy distributions which suggest a n ion induced change in hydrogen adsorbate structure.