MODELING NOISE CORRELATION BEHAVIOR IN DUAL-COLLECTOR MAGNETOTRANSISTORS USING SMALL-SIGNAL EQUIVALENT-CIRCUIT ANALYSIS

We present a distributed small signal equivalent circuit model based o n hybrid-pi for modeling of the low-frequency noise correlation behavi or in dual-collector magnetotransistors (MT's), The model is based on the assumption that the noise sources at the emitter-base junction of the transistor are spatially correlated; the degree of spatial correla tion in noise sources being limited by the intrinsic base spreading re sistance. This gives rise to a degradation in correlation of terminal collector noise currents at high current, or injection, levels due to nonuniformities in the dc bias current distribution.