THERMALLY ROBUST TA2O5 CAPACITOR FOR THE 256-MBIT DRAM

Authors
KWON KW KANG CS PARK SO KANG HK AHN ST
Citation
Kw. Kwon et al., THERMALLY ROBUST TA2O5 CAPACITOR FOR THE 256-MBIT DRAM, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 919-923
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
6
Year of publication
1996
Pages
919 - 923
Database
ISI
SICI code
0018-9383(1996)43:6<919:TRTCFT>2.0.ZU;2-G
Abstract
The thermal degradation of the Ta2O5 capacitor during BPSG reflow has been studied, The cause of deterioration of Ta2O5 with the TiN top ele ctrode was found to be the oxidation of TiN, By placing a poly-Si laye r between TIN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850 degrees C. The Ta2O5 cap acitor with the TiN/poly-Si top electrode was integrated into 256-Mbit DRAM cells and excellent leakage current characteristics were obtaine d.