OBSERVATION OF SINGLE INTERFACE TRAPS IN SUBMICRON MOSFETS BY CHARGE-PUMPING

Authors
GROESENEKEN GV DEWOLF I BELLENS R MAES HE
Citation
Gv. Groeseneken et al., OBSERVATION OF SINGLE INTERFACE TRAPS IN SUBMICRON MOSFETS BY CHARGE-PUMPING, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 940-945
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
6
Year of publication
1996
Pages
940 - 945
Database
ISI
SICI code
0018-9383(1996)43:6<940:OOSITI>2.0.ZU;2-W
Abstract
The observation of single interface traps in small area MOSFET's by ch arge pumping is demonstrated for the first time. The dependence of the single trap charge pumping current on the base level voltage is descr ibed. Also the creation of one single interface trap under influence o f low level hot carrier injection is demonstrated. A prediction of the charge pumping current behavior as a function of rise and fall time a nd temperature for the case of individual traps is made, The correlati on with RTS-noise experiments is discussed.