J. Zhao et al., IMPROVED ANALOG HOT-CARRIER IMMUNITY FOR CMOS MIXED-SIGNAL APPLICATIONS WITH LATID TECHNOLOGY, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 954-957
This paper reports the results of an investigation of hot-carrier effe
cts on analog performance in LATID (Large-Angle-Tilt-Implanted-Drain)
and conventional LDD submicron CMOS technology, The investigation focu
ses on hot-carrier induced degradation of voltage gain, degradation of
drain output resistance, and drift of offset voltage of differential
pairs, Results illustrate that LATID technology significantly out-perf
orms LDD technology in regard to hot-carrier immunity of key analog pa
rameters in short channel length devices as well as in relatively long
channel length devices. The improvement of analog hot-carries immunit
y with LATID is attributed to the mechanisms of reduction and departur
e of high electrical field from drain area., Results suggest that LATI
D technology is one of the promising candidates for mixed-signal ULSI
applications.