IMPROVED ANALOG HOT-CARRIER IMMUNITY FOR CMOS MIXED-SIGNAL APPLICATIONS WITH LATID TECHNOLOGY

This paper reports the results of an investigation of hot-carrier effe cts on analog performance in LATID (Large-Angle-Tilt-Implanted-Drain) and conventional LDD submicron CMOS technology, The investigation focu ses on hot-carrier induced degradation of voltage gain, degradation of drain output resistance, and drift of offset voltage of differential pairs, Results illustrate that LATID technology significantly out-perf orms LDD technology in regard to hot-carrier immunity of key analog pa rameters in short channel length devices as well as in relatively long channel length devices. The improvement of analog hot-carries immunit y with LATID is attributed to the mechanisms of reduction and departur e of high electrical field from drain area., Results suggest that LATI D technology is one of the promising candidates for mixed-signal ULSI applications.