OPTIMIZATION OF FULLY-IMPLANTED NPNS FOR HIGH-FREQUENCY OPERATION

Authors
NANVER LK GOUDENA EJG VANZEIJL HW
Citation
Lk. Nanver et al., OPTIMIZATION OF FULLY-IMPLANTED NPNS FOR HIGH-FREQUENCY OPERATION, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 1038-1040
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
6
Year of publication
1996
Pages
1038 - 1040
Database
ISI
SICI code
0018-9383(1996)43:6<1038:OOFNFH>2.0.ZU;2-8
Abstract
With a very straightforward (low-cost) process flow as basis, fully-im planted washed-emitter-base (WEB) NPN's have been optimized for operat ion in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the epi. A low-stress silicon rich nitr ide layer is proven effective as surface isolation before contact wind ow dip-etch.