METAL-INSULATOR-TRANSITION IN SB-DOPED SHORT-PERIOD SI SIGE SUPERLATTICES/

Low-temperature magnetotransport measurements (50 mK < T < 4.2 K) on S b-doped short period Si/SiGe superlattices (d approximate to 40 Angstr om) are presented. The experiments show evidence for single particle q uantum interference and enhanced electron-electron interaction effects . Furthermore, for a Sb doping concentration of 4.5 x 10(18) cm(-3), a field induced metal to insulator transition (MIT) is observed for mag netic fields B parallel to the superlattice layers, whereas for the pe rpendicular direction of B, the MIT does not take place. The anisotrop y and dimensionality of the SL-samples is discussed.