OPTICAL STUDIES OF ACCEPTOR CENTER DOPED GAAS ALGAAS QUANTUM-WELLS/

We present a theoretical and experimental study of the optical propert ies of acceptor centre doped quantum wells. We have performed theoreti cal calculations for the dependence of the band structure with doping level. Steady state photoluminescence and photoluminescence excitation results are compared with theoretical calculations involving exchange and correlation effects for the electron-hole system and the interact ion between charge carriers and acceptor ions. We have studied the int ensity, energy peak position, and broadening effects for excitons at d oping level between 10(8) and 10(13) cm(-2). Theoretical calculations that only consider band filling effects are not sufficient to describe the effect on the band structure due to the doping. A much better agr eement is achieved when exchange and correlation effects for the elect ron-hole system are taken into account. Excitons can still be detected at high hole concentrations, above the degenerated limit. They surviv e due to the inefficiency of screening in the two-dimensional system.