WANNIER-STARK LADDER SPECTRA IN INXGA1-XAS-GAAS STRAINED-LAYER PIEZOELECTRIC SUPERLATTICES

Authors
PEGGS DW SKOLNICK MS WHITTAKER DM HOGG RA WILLCOX ARK MOWBRAY DJ GREY R REES GJ HART L HOPKINSON M HILL G PATE MA
Citation
Dw. Peggs et al., WANNIER-STARK LADDER SPECTRA IN INXGA1-XAS-GAAS STRAINED-LAYER PIEZOELECTRIC SUPERLATTICES, Solid-state electronics, 40(1-8), 1996, pp. 167-170
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
167 - 170
Database
ISI
SICI code
0038-1101(1996)40:1-8<167:WLSIIS>2.0.ZU;2-P
Abstract
Wannier-Stark ladder transitions in the photocurrent spectra of (111)B InxGa1-xAs-GaAs strained layer superlattices are reported. Both verti cal transitions in the same well and diagonal transitions between adja cent wells are observed. In contrast to (100) superlattices, the Wanni er-Stark spectra are observed for both senses of applied bias relative to zero potential drop across the superlattice. The observed transiti on energies are found to be in good agreement with the predictions of exciton calculations. The piezo-electric field is deduced in a simple and direct way from analysis of the spectra as a function of bias.