NOVEL CLEAVED EDGE OVERGROWTH STRUCTURES FOR TUNNELING INTO ONE-DIMENSIONAL AND 2-DIMENSIONAL ELECTRON-SYSTEMS

We report the fabrication of novel electron in-plane tunneling systems in GaAs/AlxGa1-xAs using the technique of cleaved edge overgrowth, an d report results of tunneling measurements into both one- and two-dime nsional (1D and 2D) systems. Our devices demonstrate tunneling through an abrupt molecular beam epitaxially defined barrier where the shape of the barrier potential is exactly known. We study three different in -plane tunneling geometries, namely 2D-1D-2D, 2D-2D and 2D-3D, and rep ort current vs voltage characteristics for all three geometries.