3D-TO-1D CARRIER SCATTERING IN GAAS V-GROOVE QUANTUM WIRES

Epitaxial growth on nonplanar substrates is an attractive method for p roducing high quality quantum wire structures for applications in low- threshold lasers. However, a crucial factor in this application is the transfer of carriers between extended (3D) three-dimensional and conf ined (1D) one-dimensional states. In this paper we present a joint the oretical and experimental investigation of 3D-to-1D scattering in GaAs V-groove quantum wires confined either, within GaAs/AlAs short-period superlattice or bulk GaAlAs barriers. The scattering rates were compu ted using accurate wavefunctions for both the one-dimensional and the extended three-dimensional states. The rates are in good agreement wit h time-resolved luminescence measurements.