PHOTOLUMINESCENCE ENHANCEMENT INDUCED BY NEAR-SURFACE SI DOPING WIRESIN GAAS

Authors
RAMSTEINER M KLANN R DAWERITZ L HEY R KOSTIAL H JUNGK G
Citation
M. Ramsteiner et al., PHOTOLUMINESCENCE ENHANCEMENT INDUCED BY NEAR-SURFACE SI DOPING WIRESIN GAAS, Solid-state electronics, 40(1-8), 1996, pp. 329-332
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
329 - 332
Database
ISI
SICI code
0038-1101(1996)40:1-8<329:PEIBNS>2.0.ZU;2-D
Abstract
We investigated the influence of the wire-like Si dopant incorporation on the photoluminescence (PL) properties of samples with a thin GaAs cap layer. The near band gap PL has been found to be dominated by exci ton recombination in the 10 nm cap layers. For samples grown on vicina l GaAs(001) surfaces under conditions favourable for the wire-like Si incorporation, a considerable enhancement of the exciton PL intensity as well as of the PL decay time has been found.