PHOTON-ASSISTED TUNNELING IN COUPLED DOUBLE-QUANTUM WELLS

Citation
G. Blanke et al., PHOTON-ASSISTED TUNNELING IN COUPLED DOUBLE-QUANTUM WELLS, Solid-state electronics, 40(1-8), 1996, pp. 421-424
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
421 - 424
Database
ISI
SICI code
0038-1101(1996)40:1-8<421:PTICDW>2.0.ZU;2-7
Abstract
Using different techniques to individually contact two closely spaced electron gases, we study the tunneling characteristics between weakly coupled GaAs quantum wells, with and without resonant far-infrared exc itation. We find that for barriers as thick as 300 Angstrom , the alig nment between the subbands in the wells can be observed as an increase d tunneling conductivity. To study photon-assisted tunneling in our sa mples, we use the cyclotron resonance as a strong, tunable electronic excitation in the far-infrared. When the Landau-level spacing h omega( c) corresponds to the laser energy h omega(L), the carriers are effect ively pumped to higher Landau levels, which leads to a reduced resista nce across the tunnel barrier. This photoconductive signal is ''doubly resonant'' in that it is at maximum when omega(c) coincides with omeg a(L), and at the same time the subbands of the two wells are aligned.