NONGUIDING SEMICONDUCTOR MICROCAVITY - EXCITON-PHOTON MODE SPLITTING AND PHOTOLUMINESCENCE DYNAMICS

Citation
J. Bloch et al., NONGUIDING SEMICONDUCTOR MICROCAVITY - EXCITON-PHOTON MODE SPLITTING AND PHOTOLUMINESCENCE DYNAMICS, Solid-state electronics, 40(1-8), 1996, pp. 487-491
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
487 - 491
Database
ISI
SICI code
0038-1101(1996)40:1-8<487:NSM-EM>2.0.ZU;2-F
Abstract
We report on the fabrication of a nonguiding half-wave semiconductor m icrocavity containing two quantum wells, and present time resolved pho toluminescence measurements under resonant and non-resonant excitation with a variable detuning between the cavity and the quantum well exci ton. When tuning the cavity length, the emission spectra present the c haracteristic polariton-like dispersion branches with a 4.6 meV splitt ing at the anti-crossing. On the exciton-like part of each branch, the emission dynamics is similar to the emission of a bare quantum well. However on the photon-like part, the radiative lifetime is considerabl y shortened. We describe these features by a polariton type model: mix ed exciton-photon states arise from the strong radiative coupling betw een the two oscillators and present a radiative decay time which refle cts the respective proportion of exciton and photon in their wavefunct ion.