ELECTROOPTIC TUNING OF VACUUM RABI COUPLING IN SEMICONDUCTOR QUANTUM MICROCAVITY STRUCTURES

Citation
Ta. Fisher et al., ELECTROOPTIC TUNING OF VACUUM RABI COUPLING IN SEMICONDUCTOR QUANTUM MICROCAVITY STRUCTURES, Solid-state electronics, 40(1-8), 1996, pp. 493-496
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
493 - 496
Database
ISI
SICI code
0038-1101(1996)40:1-8<493:ETOVRC>2.0.ZU;2-F
Abstract
Electro-optic tuning of vacuum Rabi coupling is demonstrated on a very high quality semiconductor quantum microcavity structure with reflect ivity linewidths at resonance of 0.9 and 1.1 meV. The variation in ene rgy of the reflectivity peaks as a function of electric field is fitte d very well by a transfer matrix reflectivity (TMR) model, using an ex perimental determination of exciton oscillator strength, and hence exc iton-photon coupling strength, with electric field. In high sensitivit y photo-current experiments we obtain clear evidence for coupling to d iscrete excited and continuum exciton states.