SEMICONDUCTOR MICROCAVITY UNDER MAGNETIC-FIELD - FROM THE WEAK-COUPLING TO THE STRONG-COUPLING REGIME

Authors
TIGNON J VOISIN P WAINSTAIN J DELALANDE C VOOS M HOUDRE R OESTERLE U STANLEY RP
Citation
J. Tignon et al., SEMICONDUCTOR MICROCAVITY UNDER MAGNETIC-FIELD - FROM THE WEAK-COUPLING TO THE STRONG-COUPLING REGIME, Solid-state electronics, 40(1-8), 1996, pp. 497-500
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
497 - 500
Database
ISI
SICI code
0038-1101(1996)40:1-8<497:SMUM-F>2.0.ZU;2-L
Abstract
The Landau quantization of the in plane motion of magneto-excitons all ows a continuous tuning from the weak coupling regime to the strong co upling regime for the interaction between electronic states and photon states in a semiconductor microcavity. A quantitative interpretation is given in the framework of a semi-classical dispersive model.