MAGNETOOPTICAL INVESTIGATIONS OF SYMMETRICALLY STRAINED (GAIN)AS GA(PAS) MULTIPLE-QUANTUM-WELL STRUCTURES/

Citation
M. Volk et al., MAGNETOOPTICAL INVESTIGATIONS OF SYMMETRICALLY STRAINED (GAIN)AS GA(PAS) MULTIPLE-QUANTUM-WELL STRUCTURES/, Solid-state electronics, 40(1-8), 1996, pp. 585-589
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
585 - 589
Database
ISI
SICI code
0038-1101(1996)40:1-8<585:MIOSS(>2.0.ZU;2-D
Abstract
Magnetooptical studies have been performed on symmetrically strained ( GaIn)As/Ga(PAs) multiple quantum well heterostructures (MQWHs) of high crystalline perfection. In addition to the strong allowed optical tra nsitions, also weaker quasi-forbidden transitions are observed in the experimental magneto-photoluminescence excitation spectroscopy (magnet o-PLE) spectra, in particular at high magnetic fields. These forbidden transitions have been analyzed using the model of a two-dimensional e xciton in a magnetic field. This leads to an independent determination of the electron and the heavy hole mass in the MQWHs. The accuracy of the method in determining the carrier effective masses is evaluated a nd discussed. A consistent description of the subband structure parame ters (exciton binding energy, electron and heavy hole mass) as a Funct ion of incorporated strain is obtained.