MICROSCOPIC STRUCTURE OF STRAINED INGAAS GAAS HETEROSTRUCTURES/

Authors
PROIETTI MG TURCHINI S GARCIA J LAMBLE G MARTELLI F PROSPERI T
Citation
Mg. Proietti et al., MICROSCOPIC STRUCTURE OF STRAINED INGAAS GAAS HETEROSTRUCTURES/, Solid-state electronics, 40(1-8), 1996, pp. 653-658
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
653 - 658
Database
ISI
SICI code
0038-1101(1996)40:1-8<653:MSOSIG>2.0.ZU;2-Q
Abstract
Extended X-ray absorption fine structure spectroscopy has been used to investigate the microscopic structure of InGaAs pseudomorphically gro wn on a [001]GaAs substrate. The measure is restricted to the quasi-su rface region of the epitaxial growth by means of the glancing-angle te chnique. The results show that the strain is accommodated by bond-stre tching and bond-bending and that the lattice expands in the growth dir ection within the limits previewed by the elastic theory.