INTERFACE ELECTROLUMINESCENCE OF CONFINED CARRIERS IN TYPE-II BROKEN-GAP P-GAINASSB P-INAS SINGLE-HETEROJUNCTION/

A first observation of electroluminescence in type II broken-gap isoty pe p-GaInAsSb/p-InAs single heterojunction is reported. Two narrow lum inescence peaks were observed in the spectral range of lambda = 3-4 mu m at T = 77 K with full width at half maximum (FWHM) about 10-20 meV. Spectral position and intensity of these emission bands can be change d by drive current, and ''blue'' shift was observed with increasing cu rrent. Intensive spontaneous emission was obtained up to room temperat ure. It was found that unusual electroluminescence is due to indirect (tunnel) radiative recombination of spatially separated electrons and holes localized in deep adjacent quantum wells at the different sides of the interface. A new physical approach for the design of mid-infrar ed lasers using a type II broken-gap p-p heterojunction as an active l ayer is proposed.