DIRECT MEASUREMENT OF EXCITON DIFFUSION IN QUANTUM-WELLS

Citation
W. Heller et al., DIRECT MEASUREMENT OF EXCITON DIFFUSION IN QUANTUM-WELLS, Solid-state electronics, 40(1-8), 1996, pp. 725-728
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
725 - 728
Database
ISI
SICI code
0038-1101(1996)40:1-8<725:DMOEDI>2.0.ZU;2-Q
Abstract
We have measured the diffusion of excitons in GaAs quantum wells by us ing spatial and time-resolved photoluminescence (PL) spectroscopy at l iquid helium temperature. A displacement of the detected region (empty set 1.5 mu m) with respect to the laser spot allows us to monitor the lateral change of the PL time-dependence. With increasing displacemen t the maximum of the PL-intensity shifts systematically to later times . For a theoretical description an in-plane diffusion model is applied , with the diffusion constant D as the only fit parameter. We obtain a continuous increase of D from 15 cm(2) s(-1) to 80 cm(2) s(-1) for di splacements from 0 to 4.2 mu m. A measurement with only spatial resolu tion leads to a diffusion constant of 20 cm(2) s(-1).