EXCITON DYNAMICS AND SPIN-FLIP IN TENSILE-STRAINED QUANTUM-WELLS

Citation
E. Perez et al., EXCITON DYNAMICS AND SPIN-FLIP IN TENSILE-STRAINED QUANTUM-WELLS, Solid-state electronics, 40(1-8), 1996, pp. 737-740
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
737 - 740
Database
ISI
SICI code
0038-1101(1996)40:1-8<737:EDASIT>2.0.ZU;2-I
Abstract
We have studied the exciton dynamics and spin-flip processes in tensil e strained GaAs1-yPy/Ga0.65Al0.35As quantum wells as a function of pho sphorous composition and well width. The strain introduced by the pres ence of phosphorous modifies the valence band structure. This strongly affects the characteristic times of exciton formation and polarizatio n decay. However, the recombination time is essentially determined by the light- or heavy-character of the excitonic ground state.