We have studied the exciton dynamics and spin-flip processes in tensil
e strained GaAs1-yPy/Ga0.65Al0.35As quantum wells as a function of pho
sphorous composition and well width. The strain introduced by the pres
ence of phosphorous modifies the valence band structure. This strongly
affects the characteristic times of exciton formation and polarizatio
n decay. However, the recombination time is essentially determined by
the light- or heavy-character of the excitonic ground state.