STUDIES OF CARRIER RELAXATION IN LOW-DIMENSIONAL STRUCTURES

Authors
SUNG CY NORRIS TB ZHANG XK LAM YL VURGAFTMAN I SINGH J BHATTACHARYA PK
Citation
Cy. Sung et al., STUDIES OF CARRIER RELAXATION IN LOW-DIMENSIONAL STRUCTURES, Solid-state electronics, 40(1-8), 1996, pp. 751-754
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
751 - 754
Database
ISI
SICI code
0038-1101(1996)40:1-8<751:SOCRIL>2.0.ZU;2-X
Abstract
We have made theoretical and experimental studies of the carrier relax ation process in quantum wells and quantum wires. Monte Carlo studies of the relaxation process in wells and wires indicate that the relaxat ion times can be very large in narrow structures. Femtosecond differen tial transmission spectra measurements on similar structures grown by molecular beam epitaxy give relaxation times in good agreement with th e theoretically calculated values.