2ND-ORDER SUSCEPTIBILITIES RELATED TO VALENCE-BAND TRANSITIONS IN ASYMMETRIC SI SIGE QUANTUM-WELLS/

Authors
KRUCK P SETO M HELM M MOUSSA Z BOUCAUD P JULIEN FH LOURTIOZ JM NUTZEL JF ABSTREITER G
Citation
P. Kruck et al., 2ND-ORDER SUSCEPTIBILITIES RELATED TO VALENCE-BAND TRANSITIONS IN ASYMMETRIC SI SIGE QUANTUM-WELLS/, Solid-state electronics, 40(1-8), 1996, pp. 763-766
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
763 - 766
Database
ISI
SICI code
0038-1101(1996)40:1-8<763:2SRTVT>2.0.ZU;2-L
Abstract
The observation of second-harmonic generation in compositionally stepp ed p-type Si/SiGe multiple quantum wells is reported. The second-order nonlinear susceptibility arises from the asymmetry of the potential f or the holes in the SiGe valence band. The structure is pumped with a Q-switched CO2 laser operating at 10.6 mu m with a peak power of 2 kW and yields a frequency-doubled signal of some 10 microwatts from only 15 SiGe quantum wells. The observed signal is caused by the (zzz) comp onent of the nonlinear susceptibility. We show that the (xyz) componen t is suppressed in the waveguide geometry employed.